Work

A High-Pass Distributed Amplifier Operating from 215GHz – 315GHz in a 35nm InGaAs mHEMT Technology

Year: 2024

Type: conference-paper

Source: European Microwave Integrated Circuits Conference

DOI: 10.23919/eumic61603.2024.10732452

Authors: Lukas Gebert, Benjamin Schoch, Dominik Wrana, Thomas Ufschlag, Simon Haußmann, Axel Tessmann, Sandrine Wagner, Ingmar Kallfass

Institutions: University of Stuttgart, Fraunhofer Institute for Applied Solid State Physics

Language: English

Topic: Radio Frequency Integrated Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: Ministry of Education

OpenAlex ID: W4403938205

FWCI: 2.418

Cites: 12

Cited by: 3

Related to: 10