Work

Free-standing Lateral AlGaN/GaN Schottky Barrier Diode Based-on GaN-on-Si Technology for High Microwave Power Applications

Year: 2024

Type: conference-paper

Source: European Microwave Integrated Circuits Conference

DOI: 10.23919/eumic61603.2024.10732350

Authors: Abdalla Eblabla, Wesley Sampson, Arthur Collier, Khaled Elgaid

Institution: Cardiff University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: Engineering and Physical Sciences Research Council

Award: G4588792354

OpenAlex ID: W4403938227

FWCI: 1.208

Cites: 11

Cited by: 1

Related to: 10