Year: 2024
Type: article
Abstract: In this study, Ge20Se60Te20 and Ge20Se20Te60 chalcogenide glasses were synthesized using the melt quenching technique, and the amorphous chalcogenide Ge-Se-Te films with the same compositions were deposited via the method of electron beam evaporation. Together with the results of XRD, AFM, Raman spectroscopy, and Fourier transform spectroscopy, it was found that the as-deposited films can fully inherit the amorphous structures from the bulk glasses, and exhibit excellent far-infrared optical and thermal properties. Moreover, we found that the amorphous films have a subwavelength-level thickness without any defects, and low surface roughness, low optical loss, as well as the high optical refractive index. By optimizing the experimental parameters of electron beam evaporation, ~8 μm thick Ge20Se20Te60 films can be deposited efficiently and controllably, with a high refractive index of ~3.12, low extinction coefficient (< 0.015), and an average optical transmittance of ~70%, in the range of 8–14 μm. The development of this amorphous film is beneficial in the research of far-infrared photonic devices, and can be used for applications such as far-infrared heterogeneous metalenes.
Institution: Ningbo University
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W4403957047