Work

Introducing boron gallium nitride as carriers’ source layer for efficient near-ultraviolet microLED

Year: 2024

Type: article

Source: Physica Scripta

DOI: 10.1088/1402-4896/ad8e93

Authors: Jamshad Bashir, Muhammad Usman, Nouredine Sengouga, Mohamed Hassani

Institutions: Ghulam Ishaq Khan Institute of Engineering Sciences and Technology, University of Biskra

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4404031649

FWCI: 0.144

Cites: 33

Cited by: 1

Related to: 10