Work

An Accurate Power Loop Stray Inductance Extraction Method for SiC MOSFETs Based on Forced Resonance With Decoupling Capacitor

Year: 2024

Type: article

Source: IEEE Transactions on Power Electronics

DOI: 10.1109/tpel.2024.3490599

Authors: Da Zhou, Zhiqiang Wang, Guoqing Xin, Xiaojie Shi, Yong Kang

Institution: Huazhong University of Science and Technology

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: closed

Funder: National Natural Science Foundation of China

Award: G702100997

OpenAlex ID: W4404035452

FWCI: 0.729

Cites: 13

Cited by: 7

Related to: 10