Work

Demonstration of 1.2-kV Rated Novel Power Poly-Si/4H-SiC Heterojunction Diode With Record Low Forward Voltage Drop

Year: 2024

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2024.3482250

Authors: Hao Fu, Xiangrui Fan, Zilong Wu, Jiameng Sun, Xinyu Zhang, Zhaoxiang Wei, Guozhi Zheng, Xiaolei Yang, Shaohong Li, Runhua Huang, Song Bai, Jiaxing Wei, Siyang Liu, Weifeng Sun

Institution: Southeast University

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: closed

Funders: National Natural Science Foundation of China, Natural Science Foundation of Jiangsu Province, Fundamental Research Funds for the Central Universities, Transformation Program of Scientific and Technological Achievements of Jiangsu Province

Awards: G238497530, G2847445965, G5620386573, G6856341117, G8002971503

OpenAlex ID: W4404035693

FWCI: 0.52

Cites: 25

Cited by: 5

Related to: 10