Work

Substrate-Dependent Characteristics of AlGaN/AlN/GaN DH-HEMT: A Comprehensive Study

Year: 2024

Type: conference-paper

DOI: 10.1109/iceect61758.2024.10739025

Authors: Eshaan Namdeo, Sukwinder Singh

Institution: Dr. B. R. Ambedkar National Institute of Technology Jalandhar

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4404036076

FWCI:

Cites: 14

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Related to: 10