Work

Enhancing Drain Current Characteristic in Sub-10 nm Technology through p+ Pocket Negative Capacitance Double-Gate MOSFET

Year: 2024

Type: conference-paper

DOI: 10.1109/iceect61758.2024.10739210

Authors: Neeraj Nayan Prakash, Suman Lata Tripathi, Sobhit Saxena, Balwinder Raj

Institutions: Lovely Professional University, Dr. B. R. Ambedkar National Institute of Technology Jalandhar

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: closed

Funder: Lovely Professional University

OpenAlex ID: W4404036128

FWCI: 5.642

Cites: 21

Cited by: 7

Related to: 10