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Formation of Twin-Free Single Phase β-In2Se3 Layers via Selenium Diffusion into InP(111)B Substrate

Year: 2024
Type: article
Abstract: High Resolution Image Download MS PowerPoint Slide Indium selenide, In 2 Se 3, has recently attracted growing interest due to its remarkable properties, including room temperature ferroelectricity, outstanding photoresponsivity, and exotic in-plane ferroelectricity, which open up new regimes for next generation electronics. In 2 Se 3 also provides the important advantage of tuning the electrical properties of ultrathin layers with an external electrical and magnetic field, making it a potential platform to study novel two-dimensional physics. Yet, In 2 Se 3 has many different polymorphs, and it has been challenging to synthesize a single phase material, especially using scalable growth methods, as needed for technological applications. We recently reported the growth of twin-free ultrathin layers of In 2 Se 3 prepared by a diffusion driven molecular beam epitaxy approach, and twin-free Bi 2 Se 3 layers grown on these unique virtual substrates. In this paper, we use aberration-corrected scanning transmission electron microscopy to characterize the microstructure of these materials. We emphasize features of the In 2 Se 3 layer and In 2 Se 3 /InP interface which provide evidence for understanding the growth mechanism that leads to the twin-free and single phase In 2 Se 3 . We also show that this In 2 Se 3 layer provides an ideal substrate for growth of twin-free Bi 2 Se 3 with a nearly defect-free interface. This approach for growing high-quality twin-free single phase two-dimensional crystals using InP substrates is likely to be applicable to other technologically important materials.
Language: English
Open Access status: hybrid
Estimated APC paid: $4,500
OpenAlex ID: W4404039962
FWCI: 0.284
Cites: 26
Cited by: 3
Related to: 10