Improved lateral figure-of-merit of heteroepitaxial α-Ga2O3 power MOSFET using ferroelectric AlScN gate stack
Year: 2024
Type: article
Source: Applied Physics Letters
DOI: 10.1063/5.0232200
Authors: SeungYoon Oh, SiSung Yoon, Yoojin Lim, Gyuhyung Lee, Geonwook Yoo
Institution: Soongsil University
Language: English
Topic: Ga2O3 and related materials
Field: Materials Science
Domain: Physical Sciences
Open Access status: closed
Awards: G3606468300, G5618551011
OpenAlex ID: W4404040129