A ferroelectric capacitor with an asymmetric double-layered ferroelectric structure comprising a liquid-delivery MOCVD Pb(Zr, Ti)O3 layer and a sputter-deposited La-doped Pb(Zr, Ti)O3 for highly reliable FeRAM
Year: 2024
Type: article
Source: Applied Physics Letters
DOI: 10.1063/5.0230646
Authors: Wensheng Wang, Ko Nakamura, Masaaki Nakabayashi, Takashi Eshita, Kazuaki Takai, Kenkichi Suezawa, Mitsuaki Oikawa, Nozomi Sato, Soichiro Ozawa, Satoru Mihara, Yukinobu Hikosaka, Hitoshi Saito, Kouichi Nagai
Institution: Fujitsu (Japan)
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W4404040142