Work

Germanium surface segregation in highly doped Ge:β-Ga2O3 grown by molecular beam epitaxy observed by synchrotron radiation hard x-ray photoelectron spectroscopy

Year: 2024

Type: article

Source: Applied Physics Letters

DOI: 10.1063/5.0220212

Authors: Anthony Boucly, Tyson C. Back, Thaddeus J. Asel, Brenton A. Noesges, Prescott E. Evans, Conan Weiland, Nick Barrett

Institutions: Centre National de la Recherche Scientifique, Commissariat à l'Énergie Atomique et aux Énergies Alternatives, Université Paris-Saclay, CEA Paris-Saclay - Etablissement de Saclay, CEA Paris-Saclay, Wright-Patterson Air Force Base, U.S. Air Force Research Laboratory Materials and Manufacturing Directorate, Azimuth (United States), National Institute of Standards and Technology, Material Measurement Laboratory

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funder: Air Force Office of Scientific Research

Award: G2070621287

OpenAlex ID: W4404040214

FWCI: 0.467

Cites: 42

Cited by: 6

Related to: 10