Work

Random Telegraph Noise Due to Dielectric-Semiconductor Interface Traps in MOS Transistors

Year: 2024

Type: article

Source: IEEE Transactions on Dielectrics and Electrical Insulation

DOI: 10.1109/tdei.2024.3491672

Authors: Deepjyoti Deb, Rupam Goswami, Ratul K. Baruah

Institution: Tezpur University

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: Department of Science and Technology, Philippines

Award: G1310353897

OpenAlex ID: W4404056530

FWCI: 0.416

Cites: 26

Cited by: 4

Related to: 10