Work

Accurate Charge-Domain Bootstrapped Computing-in-Memory SRAM Design with Wide Programmable Output Voltage Range

Year: 2024

Type: conference-paper

Source: IEEE International System-on-Chip Conference (SOCC)

DOI: 10.1109/socc62300.2024.10737831

Authors: Fuyi Li, Yu Xia, Shuai Xiao, Pengcheng Yang, Xingyu Zhu, Bo Li, Jiuren Zhou, Genquan Han, Wei Mao

Institutions: Xidian University, Shanghai University of Engineering Science

Language: English

Topic: Advanced Memory and Neural Computing

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4404057412

FWCI:

Cites: 15

Cited by:

Related to: 10