Work

Low Interface Trap Density 4H-SiC MIS Structure With SiO₂ Grown by Sub- 1000 °C Intermittent Spray Hydrated Oxidation (ISHO) for UV Sensor Applications

Year: 2024

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2024.3486258

Authors: Wei-Chi Liao, Jenn-Gwo Hwu

Institution: National Taiwan University

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: National Science and Technology Council

Awards: G10491161, G5931918593

OpenAlex ID: W4404057486

FWCI: 0.208

Cites: 27

Cited by: 2

Related to: 10