Work

Boosting the two-dimensional electron gas density of Al0.20Ga0.80N/GaN heterostructures by regrowth of an epitaxial Sc0.18Al0.82N layer

Year: 2024

Type: article

Source: Applied Physics Letters

DOI: 10.1063/5.0234624

Authors: Yuhao Yin, Haiyang Zhao, Rong Liu, Shizhao Fan, Jiandong Sun, Hua Qin, Helun Song, Jiadong Li, Shitao Dong, Qian Sun, Hui Yang

Institutions: University of Science and Technology of China, Chinese Academy of Sciences

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: National Natural Science Foundation of China

Awards: G2130918107, G5315979992, G8603987699

OpenAlex ID: W4404062225

FWCI: 1.302

Cites: 42

Cited by: 9

Related to: 10