Work

Threshold Gain Reduction in Tandem Semiconductor Nano-Lasers

Year: 2024
Type: article
Abstract: It is shown that a significant reduction in the threshold gain of electrically pumped semiconductor nano-lasers may be achieved in bridge-connected tandem semiconductor nano-lasers. Optimization of the design is achieved by exploring the impact of bridge length and width on the threshold gain. In addition, a detailed examination is also made of the emission patterns of the structure. It is found that a trade-off emerges between threshold gain and beam quality where multi-lobed far field emission may be associated with the lowest threshold gains.
Source: Photonics
Language: English
Open Access status: gold
Estimated APC paid: $2,728
OpenAlex ID: W4404073167
FWCI: 0.104
Cites: 14
Cited by: 1
Related to: 10