Work

Improving the polarization switching properties of wurtzite AlN by introducing IV–IV/AlN superlattice and P-doping

Year: 2024

Type: article

Abstract: The large coercive electric field is the main obstacle for the application of wurtzite ferroelectrics in the memory devices. To explore the effective methods to reduce the coercive electric field of wurtzite ferroelectrics, in this work, after screening a series of possible candidates, (MC)1/(AlN)n (M = Ti, Zr) superlattices and anion P-doping are both chosen to regulate the switching energy barrier of wurtzite AlN based on the density functional theory calculations. It is found that the polarization switching energy barriers of wurtzite AlN gradually decrease by increasing the ratio of the MC (M = Ti, Zr) layer. When the ratio of the MC layer is up to 33%, the polarization switching energy barriers of (TiC)1/(AlN)n and (ZrC)1/(AlN)n are decreased by 68% and 55%, respectively, compared with that of pure wurtzite AlN. The anionic P-doping in AlN results in a 48% lower energy barrier. Also, the ferroelectric polarization in the designed superlattices and P-doped AlN is well maintained compared to pure AlN. Thus, the results show that the (MC)1/(AlN)n (M = Ti, Zr) superlattices and anion P-doping approaches are effective in improving the polarization switching properties of wurtzite AlN.

Source: Journal of Applied Physics

DOI: 10.1063/5.0223553

Authors: Mingyue Huang, Tianpeng Duan, Jie Jiang, Qiong Yang

Institution: Xiangtan University

Language: English

Topic: Ferroelectric and Negative Capacitance Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: hybrid

Estimated APC paid: $3,500

Funder: National Natural Science Foundation of China