Lasing Characteristics of GaInAsP Laser Diodes on Directly Bonded InP/Si Substrates with a Gas out Channel
Year: 2024
Type: article
Source: physica status solidi (a)
Institution: Sophia University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W4404085145