Frequency-Dependent Internal Gate Resistance of SiC Power MOSFETs
Year: 2024
Type: article
Abstract: This article presents an analysis of the internal gate resistance of silicon carbide (SiC) power MOSFETs and its influence on the dynamic device performance. The internal gate resistance of SiC power MOSFETs features a frequency and voltage dependency that is not observed for silicon (Si) power MOSFETs, and hence, not investigated in mature Si device technology. Using numerical device modeling based on experimental electrical characterization, the low-frequency (LF) behavior of the internal gate resistance is attributed to the defects at the SiC-oxide interface. The high-frequency (HF) behavior is explained by the gate signal propagation across the die area and incorporated in a proposed MOSFET model. In the example of a reference SiC power MOSFET design, the developed model is used to evaluate the differences between the simulated and the measured switching waveforms in more detail. The results do not only reveal the physics of the internal gate resistance of SiC power MOSFETs but also highlight how the standard SPICE models, which include the internal gate resistance as a lumped resistor, can be limited in modeling the switching waveforms of SiC power MOSFETs and estimating switching losses with high accuracy.
Authors: Salvatore Race, Ivana Kovacevic-Badstuebner, Michel Nagel, Alexander Tsibizov, Roger Stark, Dan Popescu, Bogdan Popescu, Ulrike Grossner
Institutions: ETH Zurich, Infineon Technologies (Germany)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: hybrid
Estimated APC paid: $2,495
OpenAlex ID: W4404132765