Work

Temperature Dependence of Resistive Switching Behavior in α-Ga₂O₃-Based RRAM Devices

Year: 2024

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2024.3484348

Authors: Kai Sun, Bo Peng, Lei Yuan, Jiangang Yu, Yuming Zhang, Renxu Jia

Institutions: Xidian University, North University of China

Language: English

Topic: Advanced Memory and Neural Computing

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, National Key Research and Development Program of China, Fundamental Research Funds for the Central Universities, Shanxi Provincial Key Research and Development Project

Awards: G3262686779, G4557115390, G4822318222, G50221719, G5497527013, G6035137310, G6156692778, G8192242703

OpenAlex ID: W4404132803

FWCI: 0.312

Cites: 44

Cited by: 3

Related to: 10