Work

Gate-All-Around Silicon Nanowire Field Effect Transistor Behavior at High Gate Voltages

Year: 2024

Type: conference-paper

DOI: 10.1109/nap62956.2024.10739711

Authors: Reza Nekovei, Daryoush Shiri, Amit Verma

Institutions: Texas A&M University – Kingsville, Texas A&M University, Chalmers University of Technology

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4404132995

FWCI: 0.806

Cites: 21

Cited by: 1

Related to: 10