The effect of p-doping in mid- and long-wavelength InAs/InAsSb superlattice complementary barrier infrared detectors
Year: 2024
Type: article
Source: Applied Physics Letters
DOI: 10.1063/5.0236130
Institutions: California Institute of Technology, Jet Propulsion Laboratory
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
Funder: Jet Propulsion Laboratory
Award: G2676722403
OpenAlex ID: W4404135684