Year: 2024
Type: article
Abstract: Flexible Electronics In article number 2403801, William J. Scheideler and co-workers utilize liquid metal surface oxidation to synthesize crystalline two-dimensional (<3 nm thick) InGaOx (IGO) semiconductors from hypoeutectic In-Ga alloys at plastic substrate compatible temperatures (180 °C). These ultrathin channel transistors exhibit steep subthreshold slope and high mobility (∼18 cm2 Vs−1) suitable for flexible oxide electronics.
Source: Small
Authors: Simon A. Agnew, Anand P. Tiwari, Samuel W. Ong, Md Saifur Rahman, William J. Scheideler
Institution: Dartmouth College
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W4404138679