Work

Precise p-type and n-type doping of two-dimensional semiconductors for monolithic integrated circuits

Year: 2024

Type: article

Abstract: The controllable fabrication of patterned p-type and n-type channels with precisely doping control presents a significant challenge1-5, impeding the realization of complementary metal-oxide-semiconductor (CMOS) logic using a single van der Waals material. However, such an achievement could offer substantial benefits by enabling continued transistor scaling and unprecedented interlayer interconnect technologies6,7. In this study, we devise a precise method for two-dimensional (2D) semiconductor substitutional doping, which allows for the production of wafer-scale 2H-MoTe2 thin films with specific p-type or n-type doping. By employing this technique, we are able to finely tune the carrier concentrations within the range of 1010 cm−2 to 1012 cm−2. The effectiveness of substitution doping is validated by scanning tunneling microscopy characterization, where the doping type is confirmed by observing Fermi level shifts in the corresponding spectroscopic measurements. These results are further validated through the assessment of Hall devices and field-effect transistors. Notably, we extend this approach to the synthesis of region selectively doped 2H-MoTe2 thin films via a one-step growth method, facilitating the monolithic integration of p-type and n-type semiconductor channels. Leveraging this advancement, we successfully fabricate a chip-sized 2D CMOS inverter array that demonstrates excellent device performance and yield. Collectively, these findings represent a significant stride towards the practical incorporation of 2D semiconductors in very large-scale integration technology.

Source: Nature Communications

DOI: 10.1038/s41467-024-54050-2