Topological material in the III–V family: Heteroepitaxial InBi on InAs
Year: 2024
Type: article
Abstract: InBi ( 0 0 1 ) is formed epitaxially on InAs ( 1 1 1 ) -A by depositing Bi onto an In-rich surface. Angle-resolved photoemission measurements reveal topological electronic surface states, close to the M ¯ high symmetry point. This demonstrates a heteroepitaxial system entirely in the III–V family with topological electronic properties. InBi shows coexistence of Bi and In surface terminations, in contradiction with other III–V materials. For the Bi termination, the study gives a consistent physical picture of the topological surface electronic structure of InBi ( 0 0 1 ) terminated by a Bi bilayer rather than a surface formed by splitting to a Bi monolayer termination. Theoretical calculations based on relativistic density functional theory and the one-step model of photoemission clarify the relationship between the InBi ( 0 0 1 ) surface termination and the topological surface states, supporting a predominant role of the Bi bilayer termination. Furthermore, a tight-binding model based on this Bi bilayer termination with only Bi–Bi hopping terms, and no Bi–In interaction, gives a deeper insight into the spin texture. Published by the American Physical Society 2024
Source: Physical Review Research
Institutions: University of West Bohemia in Pilsen, Université Paris-Saclay, CY Cergy Paris Université, Laboratoire Interactions, Dynamiques et Lasers, Sorbonne Université, Lund University, MAX IV Laboratory, Institute of Physics, Polish Academy of Sciences, Ludwig-Maximilians-Universität München, Advanced Light Source, AREA Science Park, Istituto Officina dei Materiali, University of Warwick, University of Pavol Jozef Šafárik
Language: English
Subfield: Atomic and Molecular Physics, and Optics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $2,625
OpenAlex ID: W4404165223