Comparison of total ionizing dose effects in SiC MOSFETs with double trench versus asymmetric trench
Year: 2024
Type: article
Source: Physica Scripta
Authors: Rongxing Cao, Wenjing Chang, Yuxin Lu, Dike Hu, Yiyuan Wang, Xianghua Zeng, Yuxiong Xue
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W4404167554