High Memory Window, Dual‐Gate Amorphous InGaZnO Thin‐Film Transistor with Ferroelectric Gate Insulator
Year: 2024
Type: article
Source: physica status solidi (a)
Institutions: University of Barishal, Kyung Hee University, Jagannath University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W4404168963