Work

Design of Ga2O3 trench gate MOSFET devices with dielectric pillars

Year: 2024

Type: article

Source: Semiconductor Science and Technology

DOI: 10.1088/1361-6641/ad904b

Authors: Tianle Zhao, Fahad Azad, Yanrun Jia, Hanzhe Zhang, Chunyang Yang, Shichen Su

Institutions: South China Normal University, National University of Sciences and Technology, State Key Laboratory on Integrated Optoelectronics

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: closed

Funder: National Natural Science Foundation of China-Guangdong Joint Fund

Award: G5338002160

OpenAlex ID: W4404170999

FWCI: 0.234

Cites: 28

Cited by: 3

Related to: 10