Work

Simplified Designs of Ge 1- y Sn y /Si(100) Diodes for Facile Integration With Si Technologies: Synthesis, Electrical Performance and Modeling Studies

Year: 2024

Type: article

Source: IEEE Journal of Selected Topics in Quantum Electronics

DOI: 10.1109/jstqe.2024.3494541

Authors: Dhruve A. Ringwala, Matthew A. Mircovich, Manuel A. Roldan, John Kouvetakis, José Menéndez

Institution: Arizona State University

Language: English

Topic: Advanced Semiconductor Detectors and Materials

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: National Science Foundation, Air Force Office of Scientific Research

Awards: FuSe-TG: Monolithic Heterointegration of GeSn and SiGeSn Alloys with Silicon Platforms, Collaborative Research: DMREF: Quasi-Direct Semiconductors, G8809731051

OpenAlex ID: W4404179714

FWCI:

Cites: 28

Cited by:

Related to: 10