Work

The identification of traps in HfO2-based FeFET with SiON as an interlayer using current transient method

Year: 2024

Type: article

Source: Semiconductor Science and Technology

DOI: 10.1088/1361-6641/ad8ae3

Authors: Lixing Zhou, Jialu Cui, Xiaolei Wang, Fengbin Tian, Hui Zhu, Manru Gong, Cong Dai, Yamin Zhang, Shiwei Feng

Institutions: Beijing University of Technology, Chinese Academy of Sciences, Institute of Microelectronics

Language: English

Topic: Ferroelectric and Negative Capacitance Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: National Natural Science Foundation of China

Award: G6998826950

OpenAlex ID: W4404193741

FWCI: 0.103

Cites: 44

Cited by: 1

Related to: 10