Robust Light Detection from Ultraviolet to Near‐Infrared with ZnGa2O4/p‐Si Heterojunction Photodiode and Its Application for Optoelectronic Physically Unclonable Functions (Adv. Electron. Mater. 11/2024)
Year: 2024
Type: article
Abstract: Robust Light Detection with Broadband ZnGa2O4/p-Si Heterojunction Photodiode for Physically Unclonable Functions In article number 2400649, Hocheon Yoo and co-workers demonstrate broadband detection performance by applying a UV-responsive ZnGa2O4 film with a low refractive index on p-Si. The device exhibited stability in various environments, benefiting from the chemical robustness of ZnGa2O4. By introducing different self-assembled monolayers to induce irregular doping, the research team enabled multi-key generation through a combination of voltage and wavelength.
Source: Advanced Electronic Materials
Language: English
Topic: Ga2O3 and related materials
Field: Materials Science
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $3,100
OpenAlex ID: W4404201855