Work

Group‐VA Doped ZnO Injection Layer for Bright and Efficient Perovskite Light‐Emitting Diodes

Year: 2024

Type: article

Source: Advanced Functional Materials

DOI: 10.1002/adfm.202413517

Authors: Xiaoyu Yang, Yongqiang Ji, Qiuyang Li, Qixuan Zhong, Hong Li, Zhangyuchang Lu, Hao‐Hsin Chen, Yanju Wang, An Hu, Shunde Li, Li Ma, Le Li, Yuzhuo Zhang, Yu Chen, Lichen Zhao, Jiang Wu, Xinqiang Wang, Changjun Lu, Rui Zhu

Institutions: Peking University, Collaborative Innovation Center of Quantum Matter, Leyard (United States), State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, Henan Academy of Sciences, State Key Laboratory of Chemical Resource Engineering, Beijing University of Chemical Technology, Nanyang Technological University, Shaanxi University of Technology, Chinese Academy of Sciences, Institute of High Energy Physics, Shanxi University

Language: English

Topic: Perovskite Materials and Applications

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: closed

Funders: National Natural Science Foundation of China, China Postdoctoral Science Foundation, Natural Science Foundation of Beijing Municipality, Beijing Nova Program, National Key Research and Development Program of China, Songshan Lake Materials Laboratory

Awards: G1391765258, G1792677924, G2438144109, G2787081171, G522243060, G5399203214, G5510826934, G5625950674, G5703722256, G6762084415, G6904410126, G6953111727, G7818341420

OpenAlex ID: W4404222257

FWCI: 1.028

Cites: 37

Cited by: 10

Related to: 10