Work

Trap Location and Stress Degradation Analysis of GaN High Electron Mobility Transistors Based on the Transient Current Method

Year: 2024

Type: article

Source: IEEE Transactions on Device and Materials Reliability

DOI: 10.1109/tdmr.2024.3495987

Authors: Qian Wen, Lixing Zhou, Xianwei Meng, Shiwei Feng, Yamin Zhang

Institution: Beijing University of Technology

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: National Natural Science Foundation of China

Awards: 基于峰值谱技术的GaN基HEMT器件陷阱演化特征及物理机制研究, G6947546890, G6998826950

OpenAlex ID: W4404238383

FWCI: 0.892

Cites: 35

Cited by: 6

Related to: 10