Work

Write Endurance Enhanced and Large Memory Window of GeSe-Based Selector-Only Memory With Indium Doping Scheme

Year: 2024

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/led.2024.3495778

Authors: Jinyu Wen, Chuanqi Yi, Jiangxi Chen, Lun Wang, Zixuan Liu, Ziqi Chen, Hao Tong, Xiangshui Miao

Institutions: Huazhong University of Science and Technology, Jianghan University

Language: English

Topic: Advanced Memory and Neural Computing

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Natural Science Foundation of Hubei Province

Awards: G524064089, G5847008275, G6801769202, G8296166218

OpenAlex ID: W4404238581

FWCI: 2.082

Cites: 19

Cited by: 20

Related to: 10