Work

E-Mode AlN/GaN HEMTs on Si With 80.4% PAE at 3.6 GHz for Low-Supply-Voltage RF Power Applications

Year: 2024

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/led.2024.3495672

Authors: Guangjie Gao, Zhihong Liu, Lu Hao, Fang Zhang, Xiaojin Chen, Hanghai Du, Weichuan Xing, Hong Zhou, Jincheng Zhang, Yue Hao

Institutions: Xidian University, Guangzhou Institute of Technology

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Central University, Yunnan Key Research and Development Program, National Key Research and Development Program of China, Fundamental Research Funds for the Central Universities, National Science Fund for Distinguished Young Scholars

Awards: G2204112166, G4314142205, G5130430070, G5827088624, G7298472212, G748733647

OpenAlex ID: W4404238596

FWCI: 2.177

Cites: 28

Cited by: 15

Related to: 10