Work

A Broadband and Transient-Accurate AlGaN/GaN HEMT SPICE Model for X-Band RF Applications

Year: 2024

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2024.3487959

Authors: Raghvendra Dangi, Ahtisham Pampori, Praveen Pal, Mohammad Sajid Nazir, Pragya Kushwaha, Yogesh Singh Chauhan

Institutions: Indian Institute of Technology Kanpur, Indian Institute of Technology Jodhpur

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: Department of Science and Technology, Ministry of Science and Technology, India

Award: G1310212673

OpenAlex ID: W4404239129

FWCI: 0.144

Cites: 33

Cited by: 1

Related to: 10