Work

Characterization of Drain-Induced Barrier Lowering in GaN HEMTs Using a Drain Current Injection Technique

Year: 2024

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2024.3489592

Authors: Björn Hult, Johan Bergsten, Ragnar Ferrand-Drake Del Castillo, Vanya Darakchieva, Anna Malmros, Hans Hjelmgren, Mattias Thorsell, Niklas Rorsman

Institutions: Chalmers University of Technology, Lund University, NanoLund, Gotmic (Sweden)

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4404239169

FWCI: 1.155

Cites: 27

Cited by: 8

Related to: 10