Work

Orientation-dependent strain and dislocation in HVPE-grown α -Ga2O3 epilayers on sapphire substrates

Year: 2024

Type: article

Source: Applied Physics Letters

DOI: 10.1063/5.0239533

Authors: Yijun Zhang, Yang Shen, Mei Cui, Jing Liu, Dabao Xie, Fangfang Ren, Shulin Gu, Youdou Zheng, Rong Zhang, Jiandong Ye

Institutions: China Jiliang University, Zhejiang University, Nanjing University

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, National Key Research and Development Program of China, Natural Science Foundation of Zhejiang Province

Awards: G2474365359, G281605579, G4259696608, G4700815263, G512247061, G60704672, G7895319458, G8628319676

OpenAlex ID: W4404251572

FWCI: 0.231

Cites: 31

Cited by: 3

Related to: 10