Work

A Two-stage, Two-way-combined, 220-GHz Power Amplifier With 17.1% PAE in a 250-nm InP HBT Process

Year: 2024

Type: conference-paper

Source: IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)

DOI: 10.1109/bcicts59662.2024.10745678

Authors: Eythan Lam, Jeff Shieh-Chieh Chien, Petra Rowell, Miguel Urteaga, James Buckwalter

Institutions: University of California, Santa Barbara, Teledyne Technologies (United States)

Language: English

Topic: Advanced Power Amplifier Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: closed

OpenAlex ID: W4404295248

FWCI: 1.612

Cites: 8

Cited by: 2

Related to: 10