Work

A Low-Noise Amplifier in 130-nm InP HBT with 15.5 dB Gain and Record 5.3 dB Noise-Figure at 212 GHz

Year: 2024

Type: conference-paper

Source: IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)

DOI: 10.1109/bcicts59662.2024.10745718

Authors: Amirreza Alizadeh, Kwangwon Park, Saleh Hassanzadehyamchi, Utku Soylu, Miguel E. Urtega, Mark J. W. Rodwell

Institutions: University of California, Santa Barbara, University of California, Davis, Teledyne Technologies (United States)

Language: English

Topic: Radio Frequency Integrated Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4404295261

FWCI: 1.6

Cites: 17

Cited by: 2

Related to: 10