Work

Large-Signal Modeling of a 50 nm mHEMT Incorporating a Physical Impact-Ionization Model

Year: 2024

Type: conference-paper

Source: IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)

DOI: 10.1109/bcicts59662.2024.10745715

Authors: Yasin Yüce, Sayed Ali Albahrani, Dirk Schwantuschke, Maxime Moulin, Arnulf Leuther

Institution: Fraunhofer Institute for Applied Solid State Physics

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4404295277

FWCI: 0.806

Cites: 10

Cited by: 1

Related to: 10