Work

Practical Dimensions of Contemporary GaN Modeling

Year: 2024

Type: conference-paper

Source: IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)

DOI: 10.1109/bcicts59662.2024.10745662

Authors: Larry Dunleavy, Jiang Liu, Hugo Morales

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4404295282

FWCI: 2.415

Cites: 11

Cited by: 2

Related to: 10