Work

High-Temperature Stability Base Ohmic Contacts for InP/GaAsSb DHBTs

Year: 2024

Type: conference-paper

Source: IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)

DOI: 10.1109/bcicts59662.2024.10745706

Authors: F. Ciabattini, A. M. Arabhavi, S. Hamzeloui, G. Bonomo, M. Ebrahimi, O. Ostinelli, C. R. Bolognesi

Institution: ETH Zurich

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4404295311

FWCI: 4.598

Cites: 10

Cited by: 2

Related to: 10