Work

Characterization and Large-Signal Modeling of 4-Pole Backgated InGaAs HEMT

Year: 2024

Type: conference-paper

Source: IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)

DOI: 10.1109/bcicts59662.2024.10745664

Authors: Antony Abel Kunnath, Sayed Ali Albahrani, Dirk Schwantuschke, Arnulf Leuther

Institution: Fraunhofer Institute for Applied Solid State Physics

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4404295403

FWCI:

Cites: 8

Cited by:

Related to: 10