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On the Safe Operating Area of InP HBTs

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Year: 2024
Type: conference-paper
Source: IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)
DOI: 10.1109/bcicts59662.2024.10745684
Authors: Markus Müller, Sebastien Fregonese, Christoph Weimer, Guangsheng Liang, Xiaodi Jin, Maximilian Froitzheim, Thomas Zimmer, Michael Schröter
Institutions: Technische Universität Dresden, Centre National de la Recherche Scientifique, Université de Bordeaux, Laboratoire de l'Intégration du Matériau au Système
Language: English

Topic: Advanced Power Amplifier Design
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
SDG: Industry, innovation and infrastructure

Open Access status: closed

Funder: National Science Foundation
OpenAlex ID: W4404295408
FWCI: 0.779
Cites: 21
Cited by: 1
Related to: 10
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