Work

High Temperature Annealing induced recovery of Hot-Carrier degradation in High Performance NPN SiGe HBTs

Year: 2024

Type: conference-paper

Source: IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)

DOI: 10.1109/bcicts59662.2024.10745709

Authors: Dimitris P. Ioannou, Adam Divergilio

Institution: GlobalFoundries (United States)

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4404295429

FWCI:

Cites: 2

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Related to: 10