Work

The Effect of Base Doping Profile on Horizontal Current Bipolar Transistor’s (HCBT) Beta Recovery at Cryogenic Temperatures

Year: 2024

Type: conference-paper

Source: IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)

DOI: 10.1109/bcicts59662.2024.10745658

Authors: Filip Bogdanović, Lovro Marković, Azra Tabaković, Josip Žilak, Marko Koričić, Tomislav Suligoj

Institutions: University of Zagreb, Faculty of Electrical Engineering and Computing in Zagreb, Ericsson (Croatia)

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4404295529

FWCI: 3.224

Cites: 16

Cited by: 4

Related to: 10