Work

Exploring Breakdown Voltage Improvement in 20-nm InGaAs-Channel HEMT-OI with Metallic Back-Gate

Year: 2024

Type: conference-paper

Source: IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)

DOI: 10.1109/bcicts59662.2024.10745682

Authors: Antony Abel Kunnath, Maxime Moulin, Sayed Ali Albahrani, Dirk Schwantuschke, Arnulf Leuther

Institution: Fraunhofer Institute for Applied Solid State Physics

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4404295536

FWCI: 0.806

Cites: 9

Cited by: 1

Related to: 10