Work

Nanometer-thick TiO2 channel thin film transistors as radical monitors for plasma enhanced atomic layer deposition

Year: 2024

Type: article

Source: Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

DOI: 10.1116/6.0003981

Authors: Kohei Yamano, Hibiki Takeda, Ryo Miyazawa, Masanori Miura, Bashir Ahmmad, Fumihiko Hirose

Institution: Yamagata University

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: Japan Society for the Promotion of Science

Awards: Study on formation mechanism on super lattices produced by radical-excited-room-temperature-atomic-layer deposition, A study on current modulation mechanism of surface-chemical-reaction associated thin film transistor under UV exposure

OpenAlex ID: W4404302453

FWCI:

Cites: 11

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Related to: 10